[Paper] Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition




Atomic Layer Deposition of Ni Thin Films and Application to Area-Selective Deposition, Woo-Hee Kim, Han-Bo-Ram Lee, Kwang Heo, Young Kuk Lee, Taek-Mo Chung, Chang Gyoun Kim, Seunghun Hong, Jong Heo, and Hyungjun Kim, Journal of The Electrochemical Society, 2011


http://dx.doi.org/10.1149/1.3504196


Abstract


Ni thin films were deposited by atomic layer deposition (ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel (Ni(dmamb)2) as a precursor and NH3 gas as a reactant. The growth characteristics and film properties of ALD Ni were investigated. Low- resistivity films were deposited on Si and SiO2 substrates, producing high-purity Ni films with a small amount of oxygen and negligible amounts of nitrogen and carbon. Additionally, ALD Ni showed excellent conformality in nanoscale via holes. Utilizing this conformality, Ni/Si core/shell nanowires with uniform diameters were fabricated. By combining ALD Ni with octadecyl- trichlorosilane (OTS) self-assembled monolayer as a blocking layer, area-selective ALD was conducted for selective deposition of Ni films. When performed on the prepatterned OTS substrate, the Ni films were selectively coated only on OTS-free regions, building up Ni line patterns with 3 µm width. Electrical measurement results showed that all of the Ni lines were electrically isolated, also indicating the selective Ni deposition.