[Paper] High Quality Area-Selective Atomic Layer Deposition Co using Ammonia Gas as a Reactant




High Quality Area-Selective Atomic Layer Deposition Co using Ammonia Gas as a Reactant, Han-Bo-Ram Lee, Woo-Hee Kim, Jeong Won Lee, Kwang Heo, In Chan Hwang, Yongjun Park, Seunghun Hong, and Hyungjun Kim, Journal of The Electrochemical Society, 2010


http://dx.doi.org/10.1149/1.3248002


Abstract


Atomic layer deposition (ALD) Co was developed using bis(N,N’-diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 µm wide Co line patterns without an etching process.