[Paper] High-quality cobalt thin films by plasma-enhanced atomic layer deposition

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High-quality cobalt thin films by plasma-enhanced atomic layer deposition, Han-Bo-Ram Lee and Hyungjun Kim, Electrochemical And Solid State Letters, 2006


http://dx.doi.org/10.1149/1.2338777


Abstract


Atomic layer deposition (ALD) Co was developed using bis(N,N-diisopropylacetamidinato)cobalt(II) as a precursor and NH3 as a reactant, producing pure Co thin films with excellent conformality and nanoscale thickness controllability. In addition to NH3, the Co films were also deposited by using H2 gas as a reactant. Compared to ALD Co using H2, the Co thin films deposited by NH3 showed a higher film quality, a lower resistivity, and a higher density. The Co thermal ALD process was applied to area-selective ALD using an octadecyltrichlorosilane self-assembled monolayer as a blocking layer, which produced 3 µm wide Co line patterns without an etching process.