[Paper] Plasma-Enhanced Atomic Layer Deposition of Ni

Plasma-Enhanced Atomic Layer Deposition of Ni, Han-Bo-Ram Lee, Sung-Hwan Bang, Woo-Hee Kim, Gil Ho Gu, Young Kuk Lee, Taek-Mo Chung, Chang Gyoun Kim, C. G. Park, and Hyungjun Kim, Japanese Journal of Applied Physics, 2010



Ni plasma enhanced atomic layer deposition (PE-ALD) using bis(dimethylamino-2-methyl-2-butoxo)nickel [Ni(dmamb)2] as a precursor and NH3 or H2 plasma as a reactant was comparatively investigated. PE-ALD Ni using NH3 plasma showed higher growth rate, lower resistivity, and lower C content than that using H2 plasma. PE-ALD Ni films were analyzed by X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy (EELS). The results showed that the reaction chemistry of ALD using NH3 plasma was clearly different with that using H2, probably due to the effects of NHx radicals.