[Paper] Supercritical Fluid Deposition of SiO2 Thin Films: Growth Characteristics and Film Propertie




Supercritical Fluid Deposition of SiO2 Thin Films: Growth Characteristics and Film Properties, Han-Bo-Ram Lee, In Chan Hwang, Jae-Min Kim, and Hyungjun Kim,   Journal of The Electrochemical Society, 2012


http://dx.doi.org/10.1149/2.031202jes


Abstract


Supercritical fluid deposition (SCFD) of SiO2 thin film using supercritical fluid CO2 (SCF CO2) was investigated. Tetraethyl orthosilicate (TEOS) andO2 were used as precursor and reactant, respectively.Growth characteristics ofSCFDSiO2 were investigated as a function of key growth parameters including the concentration of precursors, deposition time, and temperature. The activation energy of SCFD SiO2 was lower than the reported value of chemical vapor deposition of SiO2, indicating the solvation effects of SCF CO2 on the reaction of TEOS and O2. By controlling precursor concentrations, excellent gap filling of SCFD SiO2 was achieved even inside of anodic aluminum oxide with less than 50 nm hole diameter. Leakage current of SCFD SiO2 films increased with increasing oxygen concentration, which was attributed to the decrease of the film density. Higher O2 concentration led to rapid reaction of SCFD SiO2, resulting in the low density SiO2 formation with high leakage current.