[Paper] Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

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Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor, Jusang Park, Han-Bo-Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim, Journal of Energy Chemistry Volume 22, Issue 3, May 2013



http://dx.doi.org/10.1016/S2095-4956(13)60052-2 


Abstract


Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).