[Paper] Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Full-size image (75 K)

Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor, Jusang Park, Han-Bo-Ram Lee, Doyoung Kim, Jaehong Yoon, Clement Lansalot, Julien Gatineau, Henri Chevrel, Hyungjun Kim, Journal of Energy Chemistry Volume 22, Issue 3, May 2013



Cobalt (Co) thermal or plasma enhanced atomic layer deposition (PE-ALD) was investigated using a novel metal organic precursor, Co(MeCp)2, and NH3 or H2 or their plasma as a reactant. The growth characteristics, electrical and microstructural properties were investigated. Especially, PE-ALD produced Co thin films at low growth temperature down to 100 °C. Interestingly, the low temperature growth of Co films showed the formation of columnar structure at substrate temperature below 300 °C. The growth characteristics and films properties of PE-ALD Co using bis(η-methylcyclopentadienyl) Co(II) (Co(MeCp)2) was compared with those of PE-ALD Co using other Cp based metal organic precursors, bis-cyclopentadienyl cobalt (II) (CoCp2) and cyclopentadienyl isopropyl acetamidinato-cobalt (Co(CpAMD)).