[Paper]Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates



Vapor transport deposition and epitaxy of orthorhombic SnS on glass and
NaCl substrates,Artit Wangperawong,1 Steven M. Herron, Rory R. Runser, Carl H€agglund,Jukka T. Tanskanen, Han-Bo-Ram Lee, Bruce M. Clemens, and Stacey F. Bent, AIP Publishing LLC. Received 23 May 2013; accepted 9 July 2013; published online 30 July 2013


http://dx.doi.org/10.1063/1.4816746



Abstract


Polycrystalline SnS, Sn2S3, and SnS2 were deposited onto glass substrates by vapor transport deposition, with the stoichiometry controlled by deposition temperature. In addition, epitaxial growth of orthorhombic SnS(010) films on NaCl(100) with thicknesses up to 600 nm was demonstrated. The in-plane [100] directions of SnS and NaCl are oriented approximately 45° apart, and the translational relationship between SnS and NaCl was predicted by density functional theory. The epitaxial SnS is p-type with carrier concentration on the order of 1017 cm−3 and Hall hole mobility of 385 cm2 V−1 s−1 in-plane. It has indirect and direct bandgaps of 1.0 and 2.3 eV, respectively


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