[Paper] Growth of Atomic layer Deposition Platinum on TiO2

Hyun Gu Kim, Han-Bo-Ram Lee

J. Kor. Inst. Surf Eng.



Atomic layer deposition (ALD) is essential for the fabrication of nanoscale electronic devices because it
has excellent conformality, atomic scale thickness control, and large area uniformity. Metal thin films are
one of the important material components for electronic devices as a conductor. As the size of electronic
devices shrinks, the thickness of metal thin films is decreased down to few nanometers, and the metal films
become non-continuous due to inherent island growth of metal below a critical thickness. So, fabrication
of continuous metal thin films by ALD is fundamentally and practically important. Since ALD films are
grown through self-saturated reactions between precursors on surface, initial growth characteristics significantly
depend on the surface properties and the selection of precursors. In this work, we investigated ALD Pt on
TiO2 substrate by using trimethyl-methyl-cyclopentadienyl-Platinum (MeCpPtMe3) precursor and O3 reactant.
By using O3 instead of O2, initial nucleation rate of ALD Pt was increased on TiO2 surface, resulting in
formation of continuous thin Pt films. Morphologies of ALD Pt on TiO2 were characterized by using Scanning
Electron Microscope (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Crystallinity of ALD Pt on
TiO2 correlated with its growth characteristics was analyzed by X-Ray Diffraction (XRD).