[Paper]Complementary Unipolar WS2 Field-Effect Transistors Using Fermi-Level Depinning Layers


Woojin Park,Yonghun Kim,Ukjin Jung, Jin Ho Yang, Chunhum Cho, Yun Ji Kim, Syed Mohammad Najib Hasan, Hyun Gu Kim, Han Bo Ram Lee, Byoung Hun Lee

Advanced electronic materials.

DOI : http://dx.doi.org/10.1002/aelm.201500278


High contact resistance and symmetrical conduction are serious challenges in practical applications of transition metal dichalcogenide (TMD) field-effect transistors (FETs). Unipolar behavior and reduced contact resistance are achieved for tungsten disulfide (WS2) FETs by using a TiO2 interfacial layer inserted between a metal layer and a WS2 layer.