[paper] Conduction mechanism change with transport oxide layer thickness in oxide hetero-interface diode

Bu-il Nam, Jong Seo Park, Keon-Hee Lim, Yong-keon Ahn, Jinwon Lee, Jun-woo Park, Nam-Kwang Cho, Donggun Lee, Han-Bo-Ram Lee, and Youn Sang Kim

Appl. Phys. Lett. 111, 053506 (2017)

Doi: 10.1063/1.4996862


An effective and facile strategy is proposed to demonstrate an engineered oxide hetero-interface of a thin film diode with a high current density and low operating voltage. The electrical characteristics of an oxide hetero-interface thin film diode are governed by two theoretical models: the space charge-limited current model and the Fowler-Nordheim (F-N) tunneling model. Interestingly, the dominant mechanism strongly depends on the insulator thickness, and the mechanism change occurs at a critical thickness. This paper shows that conduction mechanisms of oxide hetero-interface thin film diodes depend on thicknesses of transport oxide layers and that current densities of these can be exponentially increased through quantum tunneling in the diodes with the thicknesses less than 10 nm. These oxide hetero-interface diodes have great potential for low-powered transparent nanoscale applications.